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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

LFPAK56D MOSFETs

LFPAK56D MOSFETs


關(guān)鍵應(yīng)用

Applications

  • Engine management

  • ABS/ESP systems

  • Transmission control

  • Body control

  • LED lighting



Parametric search

LFPAK56D MOSFETs
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Products

Automotive qualified products (AEC-Q100/Q101)

型號(hào) 描述 狀態(tài) 快速訪問
BUK7K15-80E Dual N-channel 80 V, 15 mΩ standard level MOSFET Production
BUK7K13-60E Dual N-channel 60 V, 10 mΩ standard level MOSFET Production
BUK7K29-100E Dual N-channel 100 V, 24.5 mΩ standard level MOSFET Production
BUK7K6R8-40E Dual N-channel 40 V, 6.8 m? standard level MOSFET Production
BUK7K17-60E Dual N-channel 60 V, 14 m? standard level MOSFET Production
BUK7K52-60E Dual N-channel 60 V, 45 m? standard level MOSFET Production
BUK7K45-100E Dual N-channel 100 V, 37.6 mΩ standard level MOSFET Production
BUK7K25-40E Dual N-channel 40 V, 25 m? standard level MOSFET Production
BUK7K17-80E Dual N-channel 80 V, 17 mΩ standard level MOSFET Production
BUK7V4R2-40H Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) Production
BUK7K134-100E Dual N-channel 100 V, 121 mΩ standard level MOSFET Production
BUK7K89-100E Dual N-channel 100 V, 82.5 mΩ standard level MOSFET Production
BUK7K12-60E Dual N-channel 60 V, 9.3 m? standard level MOSFET Production
BUK9K6R8-40E Dual N-channel 40 V, 7.2 m? logic level MOSFET Production
BUK9K134-100E Dual N-channel 100 V, 159 mΩ logic level MOSFET Production
BUK9K13-60RA Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9V13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Production
BUK9K20-80E Dual N-channel 80 V, 20 mΩ logic level MOSFET Production
BUK9K13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D Production
BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET Production
BUK7K32-100E Dual N-channel 100 V, 27.5 mΩ standard level MOSFET Production
BUK7K8R7-40E Dual N-channel 40 V, 8.5 m? standard level MOSFET Production
BUK9K8R7-40E Dual N-channel 40 V, 9.4 m? logic level MOSFET Production
BUK9K32-100E Dual N-channel 100 V, 33 mΩ logic level MOSFET Production
BUK9K13-60E Dual N-channel 60 V, 12.5 m? logic level MOSFET Production
BUK9K25-40RA Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9K30-80E Dual N-channel 80 V, 30 mΩ logic level MOSFET Production
BUK9K89-100E Dual N-channel TrenchMOS logic level FET Production
BUK7K35-60E Dual N-channel 60 V, 30 m? standard level MOSFET Production
BUK9K5R6-30E Dual N-channel 30 V, 5.8 m? logic level MOSFET Production
BUK9K18-40E Dual N-channel 40 V, 19.5 m? logic level MOSFET Production
BUK9K35-60RA Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9K22-80E Dual N-channel 80 V, 22 mΩ logic level MOSFET Production
BUK7K5R1-30E Dual N-channel 30 V, 5.1 m? standard level MOSFET Production
BUK7K23-80E Dual N-channel 80 V, 23 mΩ standard level MOSFET Production
BUK7K5R6-30E Dual N-channel 30 V, 5.1 m? standard level MOSFET Production
BUK7K18-40E Dual N-channel 40 V, 19 m? standard level MOSFET Production
BUK9K5R1-30E Dual N-channel 30 V, 5.3 m? logic level MOSFET Production
BUK9K52-60RA Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9K12-60E Dual N-channel 60 V, 11.5 mΩ logic level MOSFET Production
BUK9K35-60E Dual N-channel 60 V, 35 mΩ logic level MOSFET Production
BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET Production
BUK7K6R2-40E Dual N-channel 40 V, 5.8 m? standard level MOSFET Production
BUK9K45-100E Dual N-channel TrenchMOS logic level FET Production
BUK9K25-40E Dual N-channel 40 V, 29 m? logic level MOSFET Production
BUK9K52-60E Dual N-channel 60 V, 55 mΩ logic level MOSFET Production
BUK9K29-100E Dual N-channel TrenchMOS logic level FET Production

MOSFETs

型號(hào) 描述 狀態(tài) 快速訪問
PSMN4R2-40VSH Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) Production
PSMN013-40VLD Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Production
PSMN045-100HL N-channel 100 V, 45 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN012-60HL N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology enhanced for repetitive avalanche Production
PSMN6R8-40HS N-channel 40 V, 6.8 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN013-60HL N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN011-60HL N-channel 60 V, 11.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN8R0-40HL N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN029-100HL N-channel 100 V, 29 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN6R1-40HL N-channel 40 V, 7.2 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN013-60HS N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN025-100HS N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN9R3-60HS N-channel 60 V, 9.3 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN014-60HS N-channel 60 V, 14 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN8R5-40HS N-channel 40 V, 8.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN033-100HL N-channel 100 V, 31 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN028-100HS N-channel 100 V, 27.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN038-100HS N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
BUK7K15-80E Dual N-channel 80 V, 15 mΩ standard level MOSFET Production
BUK7K13-60E Dual N-channel 60 V, 10 mΩ standard level MOSFET Production
BUK7K29-100E Dual N-channel 100 V, 24.5 mΩ standard level MOSFET Production
BUK7K6R8-40E Dual N-channel 40 V, 6.8 m? standard level MOSFET Production
BUK7K17-60E Dual N-channel 60 V, 14 m? standard level MOSFET Production
BUK7K52-60E Dual N-channel 60 V, 45 m? standard level MOSFET Production
BUK7K45-100E Dual N-channel 100 V, 37.6 mΩ standard level MOSFET Production
BUK7K25-40E Dual N-channel 40 V, 25 m? standard level MOSFET Production
BUK7K17-80E Dual N-channel 80 V, 17 mΩ standard level MOSFET Production
BUK7V4R2-40H Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) Production
BUK7K134-100E Dual N-channel 100 V, 121 mΩ standard level MOSFET Production
BUK7K89-100E Dual N-channel 100 V, 82.5 mΩ standard level MOSFET Production
BUK7K12-60E Dual N-channel 60 V, 9.3 m? standard level MOSFET Production
BUK9K6R8-40E Dual N-channel 40 V, 7.2 m? logic level MOSFET Production
BUK9K134-100E Dual N-channel 100 V, 159 mΩ logic level MOSFET Production
BUK9K13-60RA Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9V13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Production
BUK9K20-80E Dual N-channel 80 V, 20 mΩ logic level MOSFET Production
BUK9K13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D Production
BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET Production
BUK7K32-100E Dual N-channel 100 V, 27.5 mΩ standard level MOSFET Production
BUK7K8R7-40E Dual N-channel 40 V, 8.5 m? standard level MOSFET Production
BUK9K8R7-40E Dual N-channel 40 V, 9.4 m? logic level MOSFET Production
BUK9K32-100E Dual N-channel 100 V, 33 mΩ logic level MOSFET Production
BUK9K13-60E Dual N-channel 60 V, 12.5 m? logic level MOSFET Production
BUK9K25-40RA Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9K30-80E Dual N-channel 80 V, 30 mΩ logic level MOSFET Production
BUK9K89-100E Dual N-channel TrenchMOS logic level FET Production
BUK7K35-60E Dual N-channel 60 V, 30 m? standard level MOSFET Production
BUK9K5R6-30E Dual N-channel 30 V, 5.8 m? logic level MOSFET Production
BUK9K18-40E Dual N-channel 40 V, 19.5 m? logic level MOSFET Production
BUK9K35-60RA Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9K22-80E Dual N-channel 80 V, 22 mΩ logic level MOSFET Production
BUK7K5R1-30E Dual N-channel 30 V, 5.1 m? standard level MOSFET Production
BUK7K23-80E Dual N-channel 80 V, 23 mΩ standard level MOSFET Production
BUK7K5R6-30E Dual N-channel 30 V, 5.1 m? standard level MOSFET Production
BUK7K18-40E Dual N-channel 40 V, 19 m? standard level MOSFET Production
BUK9K5R1-30E Dual N-channel 30 V, 5.3 m? logic level MOSFET Production
BUK9K52-60RA Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
PSMN014-40HLD N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology Production
BUK9K12-60E Dual N-channel 60 V, 11.5 mΩ logic level MOSFET Production
BUK9K35-60E Dual N-channel 60 V, 35 mΩ logic level MOSFET Production
BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET Production
BUK7K6R2-40E Dual N-channel 40 V, 5.8 m? standard level MOSFET Production
BUK9K45-100E Dual N-channel TrenchMOS logic level FET Production
BUK9K25-40E Dual N-channel 40 V, 29 m? logic level MOSFET Production
BUK9K52-60E Dual N-channel 60 V, 55 mΩ logic level MOSFET Production
BUK9K29-100E Dual N-channel TrenchMOS logic level FET Production

Documentation

文件名稱 標(biāo)題 類型 日期
AN11599.pdf Using power MOSFETs in parallel Application note 2016-07-13
LFPAK56D_SOT669_mk.png plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
SOT1205.step 3D model for products with SOT1205 package Design support 2017-06-30
nexperia_document_leaflet_LFPAK56D_factsheet_LR_201708.pdf LFPAK56D the ultimate dual MOSFET Leaflet 2017-08-17
AN11243.pdf Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
Nexperia_package_poster.pdf Nexperia package poster Leaflet 2020-05-15
AN50004.pdf Using power MOSFETs in DC motor control applications Application note 2021-03-02
AN50005.pdf Paralleling power MOSFETs in high power applications Application note 2021-09-13
AN50014.pdf Understanding the MOSFET peak drain current rating Application note 2022-03-28
AN10273.pdf Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN90003.pdf LFPAK MOSFET thermal design guide Application note 2023-08-22
AN50003.pdf Driving solenoids in automotive applications Application note 2023-11-03
TN00008.pdf Power MOSFET frequently asked questions and answers Technical note 2024-08-09
vp_LFPAK56D.zip LFPAK56D MOSFETs Value proposition 2024-10-04
AN90001.pdf Designing in MOSFETs for safe and reliable gate-drive operation Application note 2024-10-28

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