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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車(chē)應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

用于熱插拔和軟啟動(dòng)的ASFET

可靠的線性模式，增強(qiáng)的SOA與低導(dǎo)通電阻

無(wú)論是云還是邊緣技術(shù)，都和我們忙碌的生活息息相關(guān)。我們的日常生活很大程度上依賴于始終開(kāi)啟的機(jī)架式計(jì)算機(jī)、通信和存儲(chǔ)系統(tǒng)。要確保這些系統(tǒng)不會(huì)出現(xiàn)電源中斷，在將替換電路板插入運(yùn)行中的系統(tǒng)時(shí)保護(hù)上面的器件，必須小心控制沖擊電流。在常規(guī)MOSFET中，強(qiáng)大的SOA性能和低導(dǎo)通電阻是互斥的。Nexperia專(zhuān)用于熱插拔和軟啟動(dòng)的MOSFET在單個(gè)器件上同時(shí)提供這兩種功能，并針對(duì)不間斷的運(yùn)行要求進(jìn)行了優(yōu)化。

用于熱插拔和軟啟動(dòng)的ASFET專(zhuān)為支持始終開(kāi)機(jī)的應(yīng)用和設(shè)備而設(shè)計(jì)：

  • 當(dāng)在背板中引入電容負(fù)載時(shí)，需要采用具備強(qiáng)勁線性模式性能和增強(qiáng)安全工作區(qū)域(SOA)的MOSFET來(lái)高效可靠地控制沖擊電流
  • 一旦安全接通替換電路板，MOSFET便會(huì)完全導(dǎo)通。在此運(yùn)行模式下，具有低導(dǎo)通電阻值是最重要的，它有助于最大限度地保持低溫和高系統(tǒng)效率
   
    

用于通信基礎(chǔ)設(shè)施的熱插拔

 

參數(shù)搜索

ASFETs for Hotswap and Soft Start
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產(chǎn)品

型號(hào) 描述 狀態(tài) 快速訪問(wèn)
PSMN013-100YSE N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 Production
PSMN1R0-100ASE N-channel, 100 V, 1.04 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R0-30YLE N-channel 30 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN1R0-80CSE N-channel, 80 V, 0.95 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMN1R1-100CSE N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMN1R1-30YLE N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN1R2-80ASE N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R2-80CSE N-channel, 80 V, 1.3 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMN1R4-100ASE N-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R4-100CSE N-channel, 100 V, 1.42 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMN1R5-30BLE N-channel 30 V 1.5 m? logic level MOSFET in D2PAK Production
PSMN1R6-25YLE N-channel 25 V, 1.9 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN2R0-30YLE N-channel 30 V 2 m? logic level MOSFET in LFPAK Production
PSMN2R1-30YLE N-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN2R3-100SSE N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 Production
PSMN2R5-80SSE N-channel 80 V, 2.5 mOhm MOSFET with enhanced SOA in LFPAK88 Production
PSMN2R9-100SSE N-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in LFPAK88 Production
PSMN3R4-30BLE N-channel 30 V, 3.4 m? logic level MOSFET in D2PAK Production
PSMN3R7-100BSE N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK Production
PSMN4R2-80YSE N-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E Production
PSMN4R8-100BSE N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK Production
PSMN4R8-100PSE N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package EndOfLife
PSMN4R8-100YSE N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E Production
PSMN7R6-100BSE N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK Production
PSMN7R8-100PSE N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package EndOfLife
PSMN8R9-100BSE N-channel 100 V, 10 mOhm, standard level MOSFET in D2PAK Production
PSMNR56-25YLE N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E Production
PSMNR67-30YLE N-channel 30 V, 0.70 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E Production
PSMNR82-30YLE N-channel 30 V, 0.87 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMNR89-25YLE N-channel 25 V, 0.98 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMNR90-80ASE N-channel, 80 V, 0.9 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMNR98-25YLE N-channel 25 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
Visit our documentation center for all documentation

Application note (2)
文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
AN50006.pdf Power MOSFETs in linear mode Application note 2022-04-12
AN90016.pdf Maximum continuous currents in NEXPERIA LFPAK power MOSFETs Application note 2020-09-03

Leaflet (4)
文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
nexperia_document_CCPAK-MOSFETs_2024_Chinese.pdf CCPAK MOSFET LEAFLET CN Leaflet 2024-12-02
nexperia_document_CCPAK_MOSFETs_2024.pdf Nexperia CCPAK MOSFETs Leaflet 2024-11-19
nexperia_document_leaflet_LFPAK88_2022_CHN.pdf LFPAK88 將功率密度提升到新高度 Leaflet 2022-03-10
nexperia_document_leaflet_LFPAK88_2022.pdf LFPAK88 - Driving power-density to the next level Leaflet 2022-03-09

Selection guide (1)
文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

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交叉參考