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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

TrEOS protection for high speed data lines

TrEOS protection for high speed data lines

ESD protection for USB3.2, USB4?, Thunderbolt, HDMI 2.1 and Universal Flash

Nexperia‘s TrEOS Protection offers the ideal combination of low capacitance, low clamping voltage and high ESD robustness for your design. Helping safeguard 20 Gbps data lines systems against ESD and surge events.

Features and benefits

  • Available in specifications between 1.2 V and 9 V VRWM
  • Extremely fast switching time, under 1 ns
  • Snap-back technology allows for lowest clamping voltage
  • Suitable for up to ~20 Gbps per line pair
  • Reliable protection for sensitive transceiver SoCs
  • Ultra-low dynamic resistance/capacitance combination
  • Exceeding IEC 61000-4-2 level 4, offering IEC 61000-4-5 grade robustness
  • Available in 3 very compact, low-inductance and extreme-robustness DSN packages

Applications

  • USB Type-C (USB 2.0 / 3.2 / 4)
  • Thunderbolt (up to 40 Gbps)s
  • HDMI 2.1, FRL (up to 12 Gbps) and TMDS
  • SD-Card protection
  • All other sensitive I/Os

Optimizing the three pillars of ESD protection:

image
  • Low capacitance for highest signal integrity down to 0.1 pF
  • Low clamping and trigger for enhanced system protection down to 0.1 Ω (Rdyn)
  • High robustness against ESD up to 30 kV and Surge up to 20 A at 8/20 μs

Nexperia TrEOS portfolio for high-speed data-lines

image

Our TrEOS family is composed of two subsets of devices which can be employed together or separately:

  • Extremely high surge robustness devices are designed to be placed between the connector and AC capacitor to protect the decoupling capacitor and transceiver against possible peak pulses (up to 20 A).
  • Extremely low peak voltages devices are designed to be placed between the capacitor and the device, offering industry-leading low-trigger voltage to maximize system-level protection (Vt1 as low as 3.5 V).

Combining a protection device from both subsets is suggested, to achieve ultimate ESD protection.

Parametric search

TrEOS Protection Devices
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Products

ESD protection, TVS, filtering and signal conditioning

型號(hào) 描述 狀態(tài) 快速訪問
PUSB3FA2 ESD protection for ultra high-speed interfaces Production
PUSB3FA1 ESD protection for ultra high-speed interfaces Production
PHDMI2FR4 ESD protection for ultra high-speed interfaces Production
PESD7V0R1BSF Ultra low capacitance bidirectional ESD protection diode Production
PHDMI2AB4 ESD protection for ultra high-speed interfaces Production
PESD6V5C1USF Ultra low capacitance unidirectional ESD protection diode Production
PUSB3AB4 ESD protection for ultra high-speed interfaces Production
PUSB3FR6 ESD protection for ultra high-speed interfaces Production
PUSB3FR4 ESD protection for ultra high-speed interfaces Production
PUSB3AB6 ESD protection for ultra high-speed interfaces Production
PESD4V0Y1BSF Extremely low capacitance bidirectional ESD protection diode Production
PESD5V0H1BSF Ultra low capacitance bidirectional ESD protection diode Production
PESD3V3Y1BSF Extremely low capacitance bidirectional ESD protection diode Production
PESD7V0C1BSF Ultra low capacitance bidirectional ESD protection diode Production
PESD3V3Z1BCSF Extremely low capacitance bidirectional ESD protection diode Production
PESD7V0H1BSF Ultra low capacitance bidirectional ESD protection diode Production
PESD4V0Z1BCSF Extremely low capacitance bidirectional ESD protection diode Production
PESD3V3W1BCSF Extremely low capacitance bidirectional ESD protection diode Production
PESD5V0C1USF Ultra low capacitance unidirectional ESD protection diode Production
PESD2V0Y1BSF Extremely low capacitance bidirectional ESD protection diode Production
PESD4V0W1BCSF Extremely low capacitance bidirectional ESD protection diode Production
PESD3V3Z1BSF Extremely low capacitance bidirectional ESD protection diode Production
PESD5V0R1BSF Ultra low capacitance bidirectional ESD protection diode Production
PESD5V0C1BSF Ultra low capacitance bidirectional ESD protection diode Production

Documentation

文件名稱 標(biāo)題 類型 日期
vp_TrEOS_Protection_zh_CN.zip 用于極敏感高速接口的ESD保護(hù) Value proposition 2017-03-05
TrEOS_cover_image.jpg TrEOS package image Logo 2018-07-06
Nexperia_TrEOS_ESD_protection_for_USB_Type-C_leaflet.pdf TrEOS ESD protection for USB Type-C Leaflet 2020-03-06
Whitepaper_ESD_protection_devices_for_USB4.pdf Choosing ESD protection devices for USB4 White paper 2020-03-06
TrEOS_ESD_protection_for_USB_Type-C_leaflet_CN.pdf 面向USB Type-C?的 Leaflet 2020-03-27
Whitepaper_ESD_protection_devices_for_USB4_CN.pdf 為USB4TM選擇ESD保護(hù)器件 White paper 2020-03-27
vp_TrEOS_Protection.zip TrEOS protection for high speed data lines Value proposition 2021-08-30
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

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