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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

SOT883

SOT883

plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body

外形圖

封裝版本 封裝名稱 封裝說明 參考 發(fā)行日期
SOT883 DFN1006-3 plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body SC-101 (EIAJ) 2003-04-03

相關(guān)文檔

文件名稱 標(biāo)題 類型 日期
SOT883 3D model for products with SOT883 package Design support 2020-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN1006-3_SOT883_mk plastic, leadless ultra small package; 3 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body Marcom graphics 2017-01-28
SOT883 plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body Package information 2022-05-20
SOT883_305 DFN1006-3; Reel pack for SMD, 7"; Q3/T4 product orientation Packing information 2020-04-21
SOT883_315 DFN1006-3; Reel pack for SMD, 7"; Q3/T4 product orientation Packing information 2021-01-27
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06

采用此封裝的產(chǎn)品

Automotive qualified products (AEC-Q100/Q101)

型號 描述 快速訪問
BC857CM 45 V, 100 mA PNP general-purpose transistor
BC857AM 45 V, 100 mA PNP general-purpose transistor
BC846BM 65 V, 100 mA NPN general-purpose transistor
2PC4617RM NPN general purpose transistors
BC847BM 45 V, 100 mA NPN general-purpose transistor
BC856BM 60 V, 100 mA PNP general-purpose transistor
BAV170M Dual common cathode low-leakage diode
BC847AM 45 V, 100 mA NPN general-purpose transistor
BC857BM 45 V, 100 mA PNP general-purpose transistor
BC847CM 45 V, 100 mA NPN general-purpose transistor
BAW56M High-speed switching diode
BAT54CM Schottky barrier double diode
PDTC143EM 50 V, 100 mA NPN resistor-equipped transistor; R1?=?4.7?kΩ,?R2?=?4.7 ?kΩ
PDTC115TM NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = open
PDTA114TM PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open
PESD5V0L2UM Low capacitance double ESD protection diode
PDTC123YM NPN resistor-equipped transistor; R1 = 2.2 k?, R2 = 10 k?
PDTA123JM PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
PDTC144VM NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm
PDTC144EM 50 V, 100 mA NPN resistor-equipped transistor; R1?=?47?kΩ,?R2?=?47 kΩ
PDTC143XM NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
PDTC124TM NPN resistor-equipped transistors; R1 = 22 kOhm, R2 = open
PMBT2907AM 60 V, 600 mA PNP switching transistor
PMBT3906M 40 V, 200 mA PNP switching transistor
PDTA113ZM PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm
PESD3V3L2UM Low capacitance double ESD protection diode
PDTA123EM PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTA114EM 50 V, 100 mA PNP resistor-equipped transistor; R1?=?10?kΩ,?R2?=?10?kΩ
PDTC123JM 50 V, 100 mA NPN resistor-equipped transistor; R1?=?2.2?kΩ,?R2?=?47?kΩ
PDTA124EM PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
PDTC144WM NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm
PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor
PDTA113EM PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm
PDTC144TM NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = open
PDTC143ZM 50 V, 100 mA NPN resistor-equipped transistor; R1?=?4.7?kΩ,?R2?=?47 ?kΩ
PESD5V0V2BM Very low capacitance bidirectional ESD protection diodes
PBSS3540M 40 V, 0.5 A PNP low VCEsat (BISS) transistor
PDTC124EM 50 V, 100 mA NPN resistor-equipped transistor; R1?=?22?kΩ,?R2?=?22?kΩ
PDTC123TM NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open
PDTC124XM NPN resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm
PDTA115TM PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open
PDTC143TM NPN resistor-equipped transistor;?R1?=?4.7?kΩ,?R2?=?open
PESD5V0X2UM-Q Ultra low capacitance unidirectional double ESD protection diode
PESD5V0U2BM-Q Ultra low capacitance bidirectional double ESD protection array
PESD5V0X2UAM-Q Ultra low capacitance unidirectional double ESD protection diode
PDTC123EM 50 V, 100 mA NPN resistor-equipped transistor; R1?=?2.2?kΩ,?R2?=?2.2?kΩ
BSS84AKM 50 V, 230 mA P-channel Trench MOSFET
2N7002AKM-Q 60 V, N-channel Trench MOSFET
BSS138AKM-Q 60 V, N-channel Trench MOSFET
PDTA114YM PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ

Bipolar transistors

型號 描述 快速訪問
BC857CM 45 V, 100 mA PNP general-purpose transistor
BC857AM 45 V, 100 mA PNP general-purpose transistor
BC846BM 65 V, 100 mA NPN general-purpose transistor
2PC4617RM NPN general purpose transistors
BC847BM 45 V, 100 mA NPN general-purpose transistor
BC856BM 60 V, 100 mA PNP general-purpose transistor
BC847AM 45 V, 100 mA NPN general-purpose transistor
BC857BM 45 V, 100 mA PNP general-purpose transistor
BC847CM 45 V, 100 mA NPN general-purpose transistor
PDTA144TM PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open
PDTC143EM 50 V, 100 mA NPN resistor-equipped transistor; R1?=?4.7?kΩ,?R2?=?4.7 ?kΩ
PDTC115TM NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = open
PDTA143TM PNP resistor-equipped transistor;?R1?=?4.7?kΩ,?R2?=?open
PDTA114TM PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open
PDTA123TM PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open
PDTC114TM NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open
PMBT2222AM 40 V, 600 mA NPN switching transistor
PDTC123YM NPN resistor-equipped transistor; R1 = 2.2 k?, R2 = 10 k?
PDTA143XM PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
PDTA123JM PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
PDTC144VM NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm
PDTC144EM 50 V, 100 mA NPN resistor-equipped transistor; R1?=?47?kΩ,?R2?=?47 kΩ
PDTC143XM NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
PDTC124TM NPN resistor-equipped transistors; R1 = 22 kOhm, R2 = open
PMBT2907AM 60 V, 600 mA PNP switching transistor
PMBT3906M 40 V, 200 mA PNP switching transistor
PDTA113ZM PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm
PDTA123EM PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTA114EM 50 V, 100 mA PNP resistor-equipped transistor; R1?=?10?kΩ,?R2?=?10?kΩ
PDTA143ZM 50 V, 100 mA PNP resistor-equipped transistor; R1?=?4.7?kΩ,?R2?=?47 ?kΩ
PDTA144VM PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm
PDTA124TM PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open
PDTC123JM 50 V, 100 mA NPN resistor-equipped transistor; R1?=?2.2?kΩ,?R2?=?47?kΩ
PDTA124EM PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
PDTC144WM NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm
PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor
PDTA113EM PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm
PDTA115EM PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
PDTA143EM PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ
PDTC144TM NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = open
PDTC114EM NPN resistor-equipped transistors;?R1?=?10?kΩ,?R2?=?10?kΩ
PDTA144WM PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm
PDTC143ZM 50 V, 100 mA NPN resistor-equipped transistor; R1?=?4.7?kΩ,?R2?=?47 ?kΩ
PBSS3540M 40 V, 0.5 A PNP low VCEsat (BISS) transistor
PDTC124EM 50 V, 100 mA NPN resistor-equipped transistor; R1?=?22?kΩ,?R2?=?22?kΩ
PDTC123TM NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open
PDTC114YM 50 V, 100 mA NPN resistor-equipped transistor; R1?=?10?kΩ,?R2?=?47?kΩ
PDTC124XM NPN resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm
PDTA115TM PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open
PDTC143TM NPN resistor-equipped transistor;?R1?=?4.7?kΩ,?R2?=?open
PDTA123YM PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm
PDTA124XM PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ
PDTA144EM PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ
PDTC123EM 50 V, 100 mA NPN resistor-equipped transistor; R1?=?2.2?kΩ,?R2?=?2.2?kΩ
PDTC115EM 50 V, 20 mA NPN resistor-equipped transistor; R1?=?100?kΩ,?R2?=?100?kΩ
PMBT3904M 40 V, 200 mA NPN switching transistor
PDTA114YM PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ

Diodes

型號 描述 快速訪問
BAV170M Dual common cathode low-leakage diode
BAW56M High-speed switching diode
BAV70M High-speed switching diode
BAT54CM Schottky barrier double diode

ESD protection, TVS, filtering and signal conditioning

型號 描述 快速訪問
PESD5V0L2UM Low capacitance double ESD protection diode
PESD5V0X2UM Ultra low capacitance unidirectional double ESD protection diode
PESD5V0X2UAM Ultra low capacitance unidirectional double ESD protection diode
PESD3V3L2UM Low capacitance double ESD protection diode
PESD5V0V2BM Very low capacitance bidirectional ESD protection diodes
PESD5V0U2BM Ultra low capacitance bidirectional double ESD protection array
PESD5V0X2UM-Q Ultra low capacitance unidirectional double ESD protection diode
PESD5V0U2BM-Q Ultra low capacitance bidirectional double ESD protection array
PESD5V0X2UAM-Q Ultra low capacitance unidirectional double ESD protection diode

MOSFETs

型號 描述 快速訪問
NX138BKM 60 V, N-channel Trench MOSFET
BSS84AKM 50 V, 230 mA P-channel Trench MOSFET
PMZ130UNE 20 V, N-channel Trench MOSFET
PMZ350UPE 20 V, P-channel Trench MOSFET
PMZ600UNEL 20 V, N-channel Trench MOSFET
NX138AKM 60 V, N-channel Trench MOSFET
PMZ950UPEL 20 V, P-channel Trench MOSFET
PMZ550UNE 30 V, N-channel Trench MOSFET
NX5008NBKM 50 V, N-channel Trench MOSFET
NX7002BKM 60 V, N-channel Trench MOSFET
2N7002AKM-Q 60 V, N-channel Trench MOSFET
PMZ1200UPE 30 V, P-channel Trench MOSFET
PMZ600UNE 20 V, N-channel Trench MOSFET
PMZ390UNE 30 V, N-channel Trench MOSFET
PMZ950UPE 20 V, P-channel Trench MOSFET
PMZ290UNE2 20 V, N-channel Trench MOSFET
BSS138AKM-Q 60 V, N-channel Trench MOSFET
PMZ320UPE 30 V, P-channel Trench MOSFET
PMZ200UNE 30 V, N-channel Trench MOSFET
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