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可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| GAN3R2-100CBE | GAN3R2-100CBEAZ | 934665899341 | WLCSP8-SOT8072 | 訂單產(chǎn)品 |
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Click here for more informationGAN3R2-100CBE
100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5?mm?x?2.13?mm Wafer Level Chip-Scale Package (WLCSP)
The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15 bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance.
Features and benefits
Enhancement mode - normally-off power switch
Ultra high frequency switching capability
No body diode
Low gate charge, low output charge
Qualified for standard applications
ESD protection
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Wafer Level Chip-Scale Package (WLCSP) 3.5 mm x 2.13 mm
Applications
High power density and high efficiency power conversion
AC-to-DC converters, (secondary stage)
- High frequency DC-to-DC converters in 48 V systems
Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
Datacom and telecom (AC-to-DC and DC-to-DC) converters
Motor drives
LiDAR (non-automotive)
Class D audio amplifiers
參數(shù)類型
| 型號 | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAN3R2-100CBE | WLCSP8-SOT8072 | WLCSP8 | Production | e-mode | N | 1 | 100 | 3.2 | 150 | 1.7 | 394 | 1.1 | N | 1000 | 460 | 2023-02-22 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| GAN3R2-100CBE | GAN3R2-100CBEAZ (934665899341) |
Active | 3R2DCBE |
WLCSP8 (WLCSP8-SOT8072) |
WLCSP8-SOT8072 | WLCSP8-SOT8072_341 |
Boards
| Part number | Description | Type | Quick links | Shop link |
|---|---|---|---|---|
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描述 The NX-HB-GAN3R2-BSC half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 100V E-Mode GaN FETs. The circuit is configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high / low level inputs. The voltage input and output can operate at up to 60 VDC, with a power output > 350 W
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類型 Evaluation board
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Quick links
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Shop link
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環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| GAN3R2-100CBE | GAN3R2-100CBEAZ | GAN3R2-100CBE |
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文檔 (22)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| GAN3R2-100CBE | 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5?mm?x?2.13?mm Wafer Level Chip-Scale Package (WLCSP) | Data sheet | 2023-04-27 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| AN90041 | Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs | Application note | 2023-05-09 |
| WLCSP8-SOT8072 | 3D model for products with WLCSP8-SOT8072 package | Design support | 2023-04-13 |
| WLCSP8-SOT8072 | wafer level chip-scale package; 8 solder bars; body: 3.5 x 2.13 x 0.429 mm | Package information | 2023-03-21 |
| WLCSP8-SOT8072_341 | WLCSP8; Reel dry pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2023-04-18 |
| GAN3R2-100CBE | GAN3R2-100CBE SPICE model | SPICE model | 2023-04-12 |
| GAN3R2-100CBE_LTspice | GAN3R2-100CBE LTspice model | SPICE model | 2024-09-09 |
| GAN3R2-100CBE_SIMetrix | GAN3R2-100CBE SIMetrix SPICE model | SPICE model | 2024-09-09 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| CauerModel_GAN3R2-100CBE | Cauer model GAN3R2-100CBE | Thermal model | 2023-04-12 |
| FosterModel_GAN3R2-100CBE | Foster model GAN3R2-100CBE | Thermal model | 2023-04-12 |
| GAN3R2-100CBE | GAN3R2-100CBE RC thermal model | Thermal model | 2023-04-12 |
| GAN3R2-100CBE_Cauer | GAN3R2-100CBE Cauer model | Thermal model | 2023-04-12 |
| GAN3R2-100CBE_Foster | GAN3R2-100CB Foster model | Thermal model | 2023-04-12 |
| UM90038 | NX-HB-GAN3R2-BSC half-bridge evaluation board | User manual | 2024-06-27 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮書: 功率GaN技術(shù)： 高效功率轉(zhuǎn)換的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
支持
如果您需要設(shè)計/技術(shù)支持，請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| WLCSP8-SOT8072 | 3D model for products with WLCSP8-SOT8072 package | Design support | 2023-04-13 |
| GAN3R2-100CBE | GAN3R2-100CBE SPICE model | SPICE model | 2023-04-12 |
| GAN3R2-100CBE_LTspice | GAN3R2-100CBE LTspice model | SPICE model | 2024-09-09 |
| GAN3R2-100CBE_SIMetrix | GAN3R2-100CBE SIMetrix SPICE model | SPICE model | 2024-09-09 |
| CauerModel_GAN3R2-100CBE | Cauer model GAN3R2-100CBE | Thermal model | 2023-04-12 |
| FosterModel_GAN3R2-100CBE | Foster model GAN3R2-100CBE | Thermal model | 2023-04-12 |
| GAN3R2-100CBE | GAN3R2-100CBE RC thermal model | Thermal model | 2023-04-12 |
| GAN3R2-100CBE_Cauer | GAN3R2-100CBE Cauer model | Thermal model | 2023-04-12 |
| GAN3R2-100CBE_Foster | GAN3R2-100CB Foster model | Thermal model | 2023-04-12 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| GAN3R2-100CBE | GAN3R2-100CBEAZ | 934665899341 | Active | WLCSP8-SOT8072_341 | 1,500 | 訂單產(chǎn)品 |
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GAN3R2-100CBE
100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5?mm?x?2.13?mm Wafer Level Chip-Scale Package (WLCSP)
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