可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
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NPS3102BGB | NPS3102BGBJ | 935691508118 | SOT8037-1 | 訂單產(chǎn)品 |
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Click here for more information12 V, 2 A to 13.5 A, 17 mΩ eFuse
NPS3102A and NPS3102B are low-ohmic (17 m?), high current (13.5 A), resettable electronic fuses that are targeted for 12 V applications. They are designed to protect downstream loads from exposure to excessive voltage and protect the power supply from load faults and large inrush currents.
Output slew rate is controlled by a capacitor at dVdt pin. Current limit can be adjusted in the 2 A to 13.5 A range using a resistor at ILIM pin. The voltage at ILIM pin can also be used as a measure of the load current in real-time. The devices include a built-in over voltage clamp that will limit the output voltage during input over voltage conditions.
The devices also include a multi-function EN/FLT pin. When the pin is left floating and the voltage at IN is greater than the under voltage lock-out, the devices turn on. During operation, the voltage at the pin can be used as a fault indicator to determine if the devices are operating normally. Pulling the EN/FLT pin low will turn off the devices.
During thermal shutdown, both devices disable the integrated pass-FET if the die temperature crosses the over temperature threshold. The NPS3102A latches off under a thermal shutdown event and requires user reset by toggling the EN/FLT pin or cycling the voltage at the IN pin. The NPS3102B integrates auto-retry, which safely attempts to re-enable the pass-FET without the need for user intervention.
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Up to 18 V operating range, 21 V absolute maximum
Integrated 17 m? pass MOSFET
15 V output voltage clamp
2 A to 13.5 A adjustable output current clamp
2 μs short circuit protection response time
Programmable output rise time control
Built-In thermal shutdown with fault alert pin
Fault response options: latch-off, auto-retry
Leadless plastic package; 10 terminals, body 3.0 x 3.0 x 0.75 mm (DFN3030-10/SOT8037-1)
ESD protection:
HBM ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from Tj = -40 °C to +125 °C
型號 | VCC [min] (V) | VCC [max] (V) | IO [min] (A) | IO [max] (A) | Configuration | Supported storage element | Package name | Package size (L x W) (mm) | Package version |
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NPS3102BGB | 9 | 18 | 2 | 13.5 | Auto-retry | Over voltage clamp | DFN3030-10 | 3 x 3 | SOT8037-1 |
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
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NPS3102BGB | NPS3102BGBJ (935691508118) |
Active | s2B |
DFN3030-10 (SOT8037-1) |
SOT8037-1 | SOT8037-1_118 |
Part number | Description | Type | Quick links | Shop link |
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描述 This NEVB-NPS3102B evaluation board is designed to evaluate the performance and behavior of the NPS3102B electronic fuse. It includes a NMOS transistor for short circuit monitoring, a comparator circuitry with LED fault indication, selectable output voltage ramp times, and adjustable current limit settings.
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類型 Evaluation board
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Quick links
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Shop link
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文件名稱 | 標題 | 類型 | 日期 |
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NPS3102 | 12 V, 2 A to 13.5 A, 17 mΩ eFuse | Data sheet | 2024-07-18 |
SOT8037-1 | 3D model for products with SOT8037 package | Design support | 2024-07-12 |
nexperia_documentation_leaflet_ | 12 V, 2 A-13.5 A (17 mΩ) eFuse | Leaflet | 2024-07-19 |
SOT8037-1 | DFN3030-10: Leadless plastic package; 10 terminals, body 3.0 x 3.0 x 0.75 mm | Package information | 2024-07-09 |
SOT8037-1_118 | DFN3030-10L; Reel pack for SMD, 13"; Q1/T1 product orientation | Packing information | 2024-07-10 |
UM90036 | NPS3102A; NPS3102B 12 V, 2 A-13.5 A, 17 mΩ eFuse evaluation board | User manual | 2024-07-18 |
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文件名稱 | 標題 | 類型 | 日期 |
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SOT8037-1 | 3D model for products with SOT8037 package | Design support | 2024-07-12 |
型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
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NPS3102BGB | NPS3102BGBJ | 935691508118 | Active | SOT8037-1_118 | 3,000 | 訂單產(chǎn)品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.