可訂購(gòu)部件
型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
---|---|---|---|---|
74AUP2G00DC-Q100 | 74AUP2G00DC-Q100H | 935690861125 | SOT765-1 | 訂單產(chǎn)品 |
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Click here for more informationLow-power dual 2-input NAND gate
The 74AUP2G00-Q100 provides dual 2-input NAND function.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
Low static power consumption; ICC = 0.9 μA (maximum)
Latch-up performance exceeds 100 mA per JESD78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial power-down mode operation
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
型號(hào) | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name |
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74AUP2G00DC-Q100 | 0.8?-?3.6 | CMOS | ± 1.9 | 8.3 | 70 | 2 | ultra low | -40~125 | VSSOP8 |
Model Name | 描述 |
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型號(hào) | 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
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74AUP2G00DC-Q100 | 74AUP2G00DC-Q100H (935690861125) |
Active | p00 |
VSSOP8 (SOT765-1) |
SOT765-1 | SOT765-1_125 |
型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
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74AUP2G00DC-Q100 | 74AUP2G00DC-Q100H | 74AUP2G00DC-Q100 |
文件名稱 | 標(biāo)題 | 類型 | 日期 |
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74AUP2G00_Q100 | Low-power dual 2-input NAND gate | Data sheet | 2024-08-12 |
AN11052 | Pin FMEA for AUP family | Application note | 2019-01-09 |
Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
SOT765-1 | 3D model for products with SOT765-1 package | Design support | 2020-01-22 |
aup2g00 | aup2g00 IBIS model | IBIS model | 2013-04-07 |
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Leaflet | 2019-04-12 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
VSSOP8_SOT765-1_mk | plastic, very thin shrink small outline package; 8 leads; 0.5 mm pitch; 2 mm x 2.3 mm x 1 mm body | Marcom graphics | 2017-01-28 |
SOT765-1 | plastic, very thin shrink small outline package; 8 leads; 0.5 mm pitch; 2 mm x 2.3 mm x 1 mm body | Package information | 2022-06-03 |
SOT765-1_125 | VSSOP8; Reel pack for SMD, 7''; Q3/T4 product orientation | Packing information | 2020-04-21 |
74AUP2G00DC-Q100_Nexperia_Product_Reliability | 74AUP2G00DC-Q100 Nexperia Product Reliability | Quality document | 2024-06-16 |
如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。
Model Name | 描述 |
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型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
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74AUP2G00DC-Q100 | 74AUP2G00DC-Q100H | 935690861125 | Active | SOT765-1_125 | 3,000 | 訂單產(chǎn)品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.