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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74AUP2G06GW

Low-power dual inverter with open-drain output

The 74AUP2G06 provides two inverting buffers with open-drain output. The output of the device is an open drain and can be connected to other open-drain outputs to implement active-LOW wired?-?OR or active-HIGH wired-AND functions.

Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.

This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.

This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

Features and benefits

  • Wide supply voltage range from 0.8 V to 3.6 V

  • High noise immunity

  • Low static power consumption; ICC = 0.9 μA (maximum)

  • Latch-up performance exceeds 100 mA per JESD 78B Class II

  • Inputs accept voltages up to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial Power-down mode operation

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8-B (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

參數(shù)類型

型號 VCC (V) Logic switching levels Output drive capability (mA) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C) Package name
74AUP2G06GW 0.8?-?3.6 CMOS 1.9 70 2 ultra low -40~125 TSSOP6

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74AUP2G06GW 74AUP2G06GW,125
(935279983125)
Active p6 SOT363-2
TSSOP6
(SOT363-2)
SOT363-2 SOT363-2_125

環(huán)境信息

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
74AUP2G06GW 74AUP2G06GW,125 74AUP2G06GW rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (8)

文件名稱 標(biāo)題 類型 日期
74AUP2G06 Low-power dual inverter with open-drain output Data sheet 2023-07-24
AN11052 Pin FMEA for AUP family Application note 2019-01-09
SOT363-2 3D model for products with SOT363-2 package Design support 2023-02-02
aup2g06 aup2g06 IBIS model IBIS model 2014-12-21
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Leaflet 2019-04-12
SOT363-2 plastic thin shrink small outline package; 6 leads; body width 1.25 mm Package information 2022-11-21
SOT363-2_125 TSSOP6 ; Reel pack for SMD, 7"; Q3/T4 product orientation Packing information 2022-11-04
74AUP2G06GW_Nexperia_Product_Reliability 74AUP2G06GW Nexperia Product Reliability Quality document 2024-06-16

支持

如果您需要設(shè)計/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
aup2g06 aup2g06 IBIS model IBIS model 2014-12-21
SOT363-2 3D model for products with SOT363-2 package Design support 2023-02-02

PCB Symbol, Footprint and 3D Model

Model Name 描述

訂購、定價與供貨

型號 Orderable part number Ordering code (12NC) 狀態(tài) 包裝 Packing Quantity 在線購買
74AUP2G06GW 74AUP2G06GW,125 935279983125 Active SOT363-2_125 3,000 訂單產(chǎn)品

樣品

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如果您沒有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購部件

型號 可訂購的器件編號 訂購代碼(12NC) 封裝 從經(jīng)銷商處購買
74AUP2G06GW 74AUP2G06GW,125 935279983125 SOT363-2 訂單產(chǎn)品
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