可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| BST82 | BST82,215 | 933733110215 | SOT23 | 訂單產(chǎn)品 |
| BST82 | BST82,235 | 933733110235 | SOT23 | 訂單產(chǎn)品 |
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Click here for more informationBST82
N-channel TrenchMOS intermediate level FET
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
不建議用在新設(shè)計(jì)中(NRND)。
Features and benefits
Saves PCB space due to small footprint
Suitable for high frequency applications due to fast switching characteristics
Suitable for logic level gate drive sources
Applications
High-speed line drivers
Logic level translators
Relay drivers
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BST82
|
SOT23 | SOT23 | Not for design in | N | 1 | 100 | 20 | 10 | 150 | 0.19 | 0.83 | 30 | 2 | N | 25 | 8.5 | 2011-01-24 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
|
BST82
|
BST82,215 (933733110215) |
Active | O2% |
(SOT23) |
SOT23 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT23_215 |
| BST82,235 (933733110235) |
Active | O2% | SOT23_235 |
環(huán)境信息
品質(zhì)及可靠性免責(zé)聲明文檔 (19)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BST82 | N-channel enhancement mode field-effect transistor | Data sheet | 2000-07-25 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| SOT23 | 3D model for products with SOT23 package | Design support | 2019-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT23_mk | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT23 | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Package information | 2022-10-12 |
| SOT23_215 | Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2020-04-29 |
| SOT23_235 | Reel pack for SMD, 11"; Q3/T4 product orientation | Packing information | 2020-06-01 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| BST82_8_20_2010 | BST82 Spice model | SPICE model | 2013-12-13 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BST82_8_20_2010 | BST82 Spice model | SPICE model | 2013-12-13 |
| SOT23 | 3D model for products with SOT23 package | Design support | 2019-01-22 |
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
BST82
N-channel TrenchMOS intermediate level FET
從安世半導(dǎo)體購買
| SKU | 庫存* | MOQ | 單位價(jià)格 | 數(shù)量 |
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