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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

BUK7K3R5-40N

Dual N-channel 40 V, 3.5 mOhm standard level MOSFET in LFPAK56D

Automotive qualified dual N-channel standard level MOSFET using the latest Trench 15 low ohmic enhanced-Trench Bottom Oxide (e-TBO) technology, providing high ruggedness at low RDSon, housed in an LFPAK56D (Dual Power-SO8) package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.

Features and benefits

  • Dual MOSFET – two silicon dies in one LFPAK56D package for significant space saving

  • Fully automotive qualified to AEC-Q101:
    • 175 °C rating suitable for thermally demanding environments
  • Trench 15 e-TBO technology:

    • Merging benefits of Superjunction technology (high ruggedness) and Split-Gate technology (low RDSon)

  • Fast and efficient switching with high damping and low spiking

  • Tight VGS(th) limits enable easy paralleling of MOSFETs

  • LFPAK Gull Wing leads:

    • High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

      Visual (AOI) soldering inspection, no need for expensive x-ray equipment
    • Easy solder wetting for good mechanical solder joint
  • LFPAK copper clip technology:
    • Improved reliability, with reduced Rth, RDSon, and package inductance
    • Increases maximum current capability and improved current spreading

Applications

  • 12 V automotive systems

  • Motor, lighting, and solenoid control

  • Transmission control

  • Ultra high-performance power switching

參數(shù)類型

型號 Package version Package name Product status Channel type Nr of transistors Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) ID [max] (A) QGD [typ] (nC) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Ptot [max] (W) Qr [typ] (nC) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Ciss [typ] (pF) Coss [typ] (pF) Coss [typ] (pF) Release date
BUK7K3R5-40N SOT1205 LFPAK56D; Dual LFPAK Production N 2 1 40 3.5 175 80 105 15.2 16 42 47 97 57 11 19 3 Y 2340 2200 740 677 2024-08-20

文檔 (8)

文件名稱 標(biāo)題 類型 日期
BUK7K3R5-40N Dual N-channel 40 V, 3.5 mOhm standard level MOSFET in LFPAK56D Data sheet 2024-08-15
SOT1205 3D model for products with SOT1205 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56D_SOT1205_mk plastic, single ended surface mounted package (LFPAK56D); 8 leads; 1.27 mm pitch; 4.7 mm x 5.3 mm x 1.05 mm body Marcom graphics 2017-01-28
BUK7K3R5-40N_LTspice_V1 BUK7K3R5-40N Precision ElectroThermal (PET) LTspice model PET SPICE model 2024-08-28
SOT1205 plastic, single ended surface mounted package (LFPAK56D); 8 leads Package information 2022-03-11
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

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模型

文件名稱 標(biāo)題 類型 日期
BUK7K3R5-40N_LTspice_V1 BUK7K3R5-40N Precision ElectroThermal (PET) LTspice model PET SPICE model 2024-08-28
SOT1205 3D model for products with SOT1205 package Design support 2017-06-30

訂購、定價與供貨

樣品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.