可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
---|---|---|---|---|
PCMF1USB3BA | PCMF1USB3BA/CZ | 934660285087 | WLCSP5_2-1-2 | 訂單產(chǎn)品 |
進(jìn)一步了解Nexperia的豐富產(chǎn)品組合,比如二極管、雙極性晶體管、ESD保護(hù)器件、MOSFET器件、氮化鎵場效應(yīng)晶體管(GaN FET)、絕緣柵雙極晶體管(IGBT)以及模擬IC和邏輯IC。我們的器件廣泛應(yīng)用于汽車、工業(yè)、移動和消費(fèi)等多個領(lǐng)域,幾乎為世界上所有電子設(shè)計提供支持。
我們的產(chǎn)品在各行各業(yè)均有應(yīng)用,包括汽車、工業(yè)、電力、計算、消費(fèi)、移動和可穿戴設(shè)備等行業(yè)。憑借對創(chuàng)新和可持續(xù)發(fā)展的不懈承諾,我們的器件成為了行業(yè)效率基準(zhǔn),可幫助全球客戶群體開發(fā)高效節(jié)能的前沿解決方案。
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationCommon-mode EMI filter for differential channels with integrated bidirectional ESD protection
Common-mode ElectroMagnetic Interference (EMI) filters with integrated bidirectional ElectroStatic Discharge (ESD) protection for one, two and three differential channels. The devices are designed to provide low insertion loss for differential high-speed signals on each channel while unwanted common-mode signals are attenuated.
Each differential channel incorporates two signal lines that are coupled by integrated coils. Diodes provide protection to downstream components from ESD voltages up to ±15 kV on each signal line.
Type number | Number of channels | Package Name |
---|---|---|
PCMF1USB3BA/C | 1 | WLCSP5 |
PCMF2USB3BA/C | 2 | WLCSP10 |
PCMF3USB3BA/C | 3 | WLCSP15 |
One, two and three differential channels common-mode EMI filters with integrated ESD protection
ESD protection up to ±15 kV contact discharge according to IEC 61000-4-2
Superior common-mode suppression over a wide frequency range
Superior RF performance compared to other integrated filters or discrete filters with external ESD protection
Extremely high symmetry between line pairs
Industry-standard Wafer-Level Chip-Scale Packages: WLCSP5, 10 and 15 for smaller footprint
Smartphone, cellular and cordless phone
USB3.2, USB2.0, HDMI2.0, HDMI1.4
General-purpose downstream ESD protection for differential data lines
Tablet PC and Mobile Internet Device (MID)
MIPI M-PHY and D-PHY as used in Camera Serial Interface (CSI) and Display Serial Interface (DSI)
型號 | Package version | Package name | Size (mm) | Configuration | Nr of lines | VRWM (V) (V) | Cd [typ] (pF) | IPPM [max] (A) | VESD (kV) (kV) |
---|---|---|---|---|---|---|---|---|---|
PCMF1USB3BA | WLCSP5_2-1-2 | WLCSP5 | 0.77 x 1.17 x 0.57 | Bidirectional | 2 | 4 | 0.3 | 7.5 | 15 |
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
PCMF1USB3BA | PCMF1USB3BA/CZ (934660285087) |
Active |
WLCSP5 (WLCSP5_2-1-2) |
WLCSP5_2-1-2 | 暫無信息 |
文件名稱 | 標(biāo)題 | 類型 | 日期 |
---|---|---|---|
PCMFXUSB3BA_C_SER | Common-mode EMI filter for differential channels with integrated bidirectional ESD protection | Data sheet | 2020-05-12 |
WLCSP5_2-1-2 | 3D model for products with WLCSP5_2-1-2 package | Design support | 2023-03-13 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
WLCSP5_2-1-2_mk | wafer level chip-size package; 5 bumps (2-1-2) | Marcom graphics | 2017-01-28 |
WLCSP5_2-1-2 | wafer level chip-size package; 5 bumps (2-1-2); 0.4 mm pitch; 0.77 x 1.17 x 0.57 mm body | Package information | 2020-04-21 |
如果您需要設(shè)計/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。
文件名稱 | 標(biāo)題 | 類型 | 日期 |
---|---|---|---|
WLCSP5_2-1-2 | 3D model for products with WLCSP5_2-1-2 package | Design support | 2023-03-13 |
型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
---|---|---|---|---|---|---|
PCMF1USB3BA | PCMF1USB3BA/CZ | 934660285087 | Active | 暫無信息 | 4,500 | 訂單產(chǎn)品 |
作為 Nexperia 的客戶,您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.