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Click here for more informationPRTR5V0U4AD
Integrated quad ultra-low capacitance ESD protection
The PRTR5V0U4AD is designed to protect Input/Output (I/O) ports that are sensitive concerning capacitive load, such as USB 2.0, Ethernet, Digital Video Interface (DVI), etc. from destruction by ElectroStatic Discharges (ESD). It provides protection to downstream signal and supply components from ESD voltages as high as +-8 kV (contact discharge).
The PRTR5V0U4AD incorporates four pairs of ultra-low capacitance rail-to-rail diodes plus an additional Zener diode. The rail-to-rail diodes are connected to the Zener diode which allows ESD protection to be independent of the availability of a supply voltage.
The PRTR5V0U4AD is fabricated using thin film-on-silicon technology integrating four ultra-low capacitance rail-to-rail ESD protection diodes in a miniature 6-lead SOT457 package.
Features and benefits
- ESD protection compliant to IEC 61000-4-2 level 4, +-8 kV contact discharge
- Low voltage clamping due to integrated Zener diode
- Four ultra-low input capacitance (1 pF typical) rail-to-rail ESD protection diodes
- Small 6-lead SOT457 package
Applications
- General-purpose downstream ESD protection of high frequency analog signals and high-speed serial data transmission for ports inside:
- Cellular mobile handsets
- USB 2.0 and IEEE 1394 ports in PC or notebook
- Interfaces: DVI and High Definition Multimedia Interface (HDMI)
- Cordless telephones
- Wireless data systems: Wide Area Network (WAN) and Local Area Network (LAN)
- Personal Digital Assistants (PDAs)
文檔
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Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.