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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產(chǎn)品(AEC-Q100/Q101)

PSMN3R0-30YL

N-channel 30 V 3 m? logic level MOSFET in LFPAK

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.

不建議用在新設計中(NRND)。

Features and benefits

  • High efficiency due to low switching and conduction losses

  • Suitable for logic level gate drive sources

Applications

  • Class-D amplifiers

  • DC-to-DC converters

  • Motor control

  • Server power supplies

參數(shù)類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN3R0-30YL
SOT669 LFPAK56; Power-SO8 Not for design in N 1 30 3 4.04 175 100 5.1 21 45.8 81 29 1.7 N 2822 615 2011-03-10

封裝

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
PSMN3R0-30YL
PSMN3R0-30YL,115
(934063072115)
Active 3R030 SOT669
LFPAK56; Power-SO8
(SOT669)
SOT669 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115

環(huán)境信息

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
PSMN3R0-30YL
PSMN3R0-30YL,115 PSMN3R0-30YL rohs rhf
品質(zhì)及可靠性免責聲明

文檔 (23)

文件名稱 標題 類型 日期
PSMN3R0-30YL N-channel 30 V 3 mOhm logic level MOSFET in LFPAK Data sheet 2017-05-04
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT669 3D model for products with SOT669 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_POWER-SO8_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
SOT669 plastic, single-ended surface-mounted package; 4 terminals Package information 2022-05-30
SOT669_115 LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation Packing information 2022-05-10
Reliability_information_t6_sot669 Reliability qualification information Quality document 2022-10-13
T6_SOT669_PSMN3R0-30YL_Nexperia_Quality_document PSMN3R0-30YL Quality document Quality document 2022-10-12
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PSMN3R0-30YL PSMN3R0-30YL SPICE model SPICE model 2010-03-16
PSMN3R0_30YL PSMN3R0_30YL SPICE model SPICE model 2012-06-08
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要設計/技術支持,請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
PSMN3R0-30YL PSMN3R0-30YL SPICE model SPICE model 2010-03-16
PSMN3R0_30YL PSMN3R0_30YL SPICE model SPICE model 2012-06-08
SOT669 3D model for products with SOT669 package Design support 2017-06-30

訂購、定價與供貨

型號 Orderable part number Ordering code (12NC) 狀態(tài) 包裝 Packing Quantity 在線購買
PSMN3R0-30YL PSMN3R0-30YL,115 934063072115 Active SOT669_115 1,500 訂單產(chǎn)品

樣品

作為 Nexperia 的客戶,您可以通過我們的銷售機構(gòu)訂購樣品。

如果您沒有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷商網(wǎng)絡可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購部件

型號 可訂購的器件編號 訂購代碼(12NC) 封裝 從經(jīng)銷商處購買
PSMN3R0-30YL PSMN3R0-30YL,115 934063072115 SOT669 訂單產(chǎn)品
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