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Click here for more informationPXP9R1-30QL
30 V, P-channel Trench MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Logic level compatible
Trench MOSFET technology
MLPAK33 package (3.3 x 3.3 mm footprint)
Applications
High-side load switch
Battery management
DC-to-DC conversion
Switching circuits
參數(shù)類型
型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PXP9R1-30QL | SOT8002-1 | MLPAK33 | Production | P | 1 | -30 | 9.1 | 12.8 | 150 | -57.2 | 11.1 | 29 | 57 | 4.8 | 9 | -1.4 | N | 2860 | 320 | 2021-01-04 |
Series
文檔 (6)
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
AN11119 | Medium power small-signal MOSFETs in DC-to-DC conversion | Application note | 2013-05-07 |
AN11304 | MOSFET load switch PCB with thermal measurement | Application note | 2013-01-28 |
AN90017 | Load switches for mobile and computing applications | Application note | 2020-09-02 |
SOT8002_1 | 3D model for products with SOT8002-1 package | Design support | 2021-04-30 |
SOT8002-1 | 3D model for products with SOT8002-1 package | Design support | 2021-01-28 |
SOT8002-1 | plastic thermal enhanced surface mounted package; mini leads; 8 terminals;pitch 0.65 mm; 3.3 x 3.3 x 0.8 mm body | Package information | 2023-05-22 |
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.