General description
主要特性和優(yōu)勢
Features and benefits
Parametric search
NextPower 80/100V MOSFETs
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Products
MOSFETs
| 型號 | 描述 | 狀態(tài) | 快速訪問 |
|---|---|---|---|
| PSMN012-100YSF | NextPower 100 V, 11.8 mOhm N-channel MOSFET in LFPAK56 package | Production | |
| PSMN3R9-100YSF | NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package | Production | |
| PSMN015-100YSF | NextPower 100 V, 15.5 mOhm N-channel MOSFET in LFPAK56 package | Production | |
| PSMN3R5-80YSF | NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package | Production | |
| PSMN4R5-80YSF | NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 | Production | |
| PSMN7R2-100YSF | NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package | Production | |
| PSMN9R8-100YSF | NextPower 100 V, 10.2 mOhm N-channel MOSFET in LFPAK56 package | Production | |
| PSMN2R6-80YSF | NextPower 80 V, 2.4 mOhm, 231 A, N-channel MOSFET in LFPAK56E package | Production | |
| PSMN3R3-80YSF | NextPower 80 V, 3.1 mOhm, 160 A, N-channel MOSFET in LFPAK56 package | Production | |
| PSMN2R0-100SSF | NextPower 100 V, 2.07 mOhm, 267 Amp, N-channel MOSFET in LFPAK88 package | Production | |
| PSMN2R3-80SSF | NextPower 80 V, 2.3 mOhm, 240 Amp, N-channel MOSFET in LFPAK88 package | Production | |
| PSMN2R6-100SSF | NextPower 100 V, 2.6 mOhm, 200 Amp, N-channel MOSFET in LFPAK88 package | Production | |
| PSMN1R8-80SSF | NextPower 80 V, 1.8 mOhm, 270 Amp, N-channel MOSFET in LFPAK88 package | Production | |
| PSMN3R3-100SSF | NextPower 100 V, 3.3 mOhm, 180 Amp, N-channel MOSFET in LFPAK88 package | Production | |
| PSMN2R8-80SSF | NextPower 80 V, 2.8 mOhm, 205 Amp, N-channel MOSFET in LFPAK88 package | Production | |
| PSMN1R3-80SSF | NextPower 80 V, 1.2 mOhm, 335 Amp, N-channel MOSFET in LFPAK88 package | Development | |
| PSMN1R1-80ASF | NextPower 80 V, 1.11 mOhm, N-channel MOSFET in CCPAK1212 package | Production | |
| PSMN1R4-100CSF | NextPower 100 V, 1.35 mOhm, N-channel MOSFET in CCPAK1212i package | Production | |
| PSMN1R3-100ASF | NextPower 100 V, 1.3 mOhm, N-channel MOSFET in CCPAK1212 package | Production | |
| PSMNR90-80CSF | NextPower 80 V, 0.9 mOhm, N-channel MOSFET in CCPAK1212i package | Production | |
| PSMNR90-80ASF | NextPower 80 V, 0.85 mOhm, N-channel MOSFET in CCPAK1212 package | Production | |
| PSMN011-100YSF | NextPower 100V, 10.9 mΩ N-channel MOSFET in LFPAK56 package | EndOfLife | |
| PSMN6R9-100YSF | NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package | EndOfLife | |
| PSMN8R7-100YSF | NextPower 100 V, 9 mΩ N-channel MOSFET in LFPAK56 package | EndOfLife | |
| PSMN5R5-100YSF | NextPower 100 V, 5.6 mOhm N-channel MOSFET in LFPAK56 package | Production | |
| PSMN1R1-80CSF | NextPower 80 V, 1.16 mOhm, N-channel MOSFET in CCPAK1212i package | Production |
Documentation
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| AN11243.pdf | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN90011.pdf | Half-bridge MOSFET switching and its impact on EMC | Application note | 2020-04-28 |
| AN11158.pdf | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN90019.pdf | LFPAK MOSFET thermal resistance - simulation, test and optimization of PCB layout | Application note | 2020-07-20 |
| AN90016.pdf | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2020-09-03 |
| AN11156.pdf | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11261.pdf | RC Thermal Models | Application note | 2021-03-18 |
| RS724_nexperia_image_stock_communication_infrastructure_server_power_supply_201802-scr.jpg | Server power supply image | Marcom graphics | 2021-05-14 |
| AN50005.pdf | Paralleling power MOSFETs in high power applications | Application note | 2021-09-13 |
| vp_NextPower-80-100V.zip | NextPower 80/100V | Value proposition | 2022-01-31 |
| AN50014.pdf | Understanding the MOSFET peak drain current rating | Application note | 2022-03-28 |
| AN90003.pdf | LFPAK MOSFET thermal design guide | Application note | 2023-08-22 |
| AN90001.pdf | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2024-10-28 |