可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PMZ1000UN | PMZ1000UN,315 | 934063419315 | SOT883 | 訂單產(chǎn)品 |
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Click here for more informationPMZ1000UN
N-channel TrenchMOS standard level FET
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
不建議用在新設(shè)計中(NRND)。
Alternatives
Features and benefits
Fast switching
Low conduction losses due to low on-state resistance
Saves PCB space due to small footprint (90 % smaller than SOT23)
Suitable for use in compact designs due to low profile (55 % lower than SOT23)
Applications
Driver circuits
Switching in portable appliances
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PMZ1000UN
|
SOT883 | DFN1006-3 | Not for design in | N | 1 | 30 | 8 | 1000 | 1100 | 150 | 0.48 | 0.2 | 0.89 | 0.35 | 0.7 | N | 43 | 7.7 | 2011-01-24 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
|
PMZ1000UN
|
PMZ1000UN,315 (934063419315) |
Active | 6N |
DFN1006-3 (SOT883) |
SOT883 |
REFLOW_BG-BD-1
|
SOT883_315 |
文檔 (17)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PMZ1000UN | N-channel TrenchMOS standard level FET | Data sheet | 2010-09-22 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| SOT883 | 3D model for products with SOT883 package | Design support | 2020-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN1006-3_SOT883_mk | plastic, leadless ultra small package; 3 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body | Marcom graphics | 2017-01-28 |
| SOT883 | plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body | Package information | 2022-05-20 |
| SOT883_315 | DFN1006-3; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2021-01-27 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PMZ1000UN_14_02_2012 | PMZ1000UN.14_02_2012 Spice parameter | SPICE model | 2012-04-16 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
支持
如果您需要設(shè)計/技術(shù)支持，請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PMZ1000UN_14_02_2012 | PMZ1000UN.14_02_2012 Spice parameter | SPICE model | 2012-04-16 |
| SOT883 | 3D model for products with SOT883 package | Design support | 2020-01-22 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PMZ1000UN | PMZ1000UN,315 | 934063419315 | Active | SOT883_315 | 10,000 | 訂單產(chǎn)品 |
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PMZ1000UN
N-channel TrenchMOS standard level FET
從安世半導(dǎo)體購買
| SKU | 庫存* | MOQ | 單位價格 | 數(shù)量 |
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