主要特性和優(yōu)勢(shì)
- 一個(gè)晶體管和兩個(gè)電阻集成在一個(gè)封裝中
- 降低處理和庫存成本
- 廣泛的100 mA產(chǎn)品范圍
- 減少電路板空間
- 500 mA產(chǎn)品組合
- 縮短裝配時(shí)間
- 采用SOT363/457封裝的完整雙RET系列
- 簡(jiǎn)化設(shè)計(jì)流程
- 符合AEC-Q101標(biāo)準(zhǔn)
- 減少焊點(diǎn),提升系統(tǒng)可靠性
關(guān)鍵應(yīng)用
- 數(shù)字應(yīng)用
- 儀表盤
- 發(fā)動(dòng)機(jī)控制單元
參數(shù)搜索
產(chǎn)品
型號(hào) | 描述 | 狀態(tài) | 快速訪問 |
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PDTB1xxxU series | 500 mA, 50 V PNP resistor-equipped transistors | ACT |
|
PDTB113EU | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTB123EU | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTB123YU | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTB143EU | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTB143XU | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTD1xxxT series | 500 mA, 50 V NPN resistor-equipped transistors | ACT |
|
PDTD114ET | 50 V, 500 mA NPN resistor-equipped transistor; R1?=?10?kΩ,?R2?=?10?kΩ | Production | |
PDTD143ET-Q | 500 mA, 50 V NPN resistor-equipped transistor; R1?=?4.7?kΩ,?R2?=?4.7?kΩ | Production | |
PDTD143XT | 50 V, 500 mA NPN resistor-equipped transistor; R1?=?4.7?kΩ,?R2?=?10?kΩ | Production | |
PDTD1xxxU series | 500 mA, 50 V NPN resistor-equipped transistors | ACT |
|
PDTD113EU | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTD113ZU | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTD114EU-Q | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTD123EU | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTD123YU | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTD143EU | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTD143XU | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTB113EQA | 50 V, 500 mA PNP resistor-equipped transistors | Production | |
PDTB113ZQA | 50 V, 500 mA PNP resistor-equipped transistors | Production | |
PDTB114EQA | 50 V, 500 mA PNP resistor-equipped transistors | Production | |
PDTB114ET | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTB114EU-Q | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTB123EQA | 50 V, 500 mA PNP resistor-equipped transistors | Production | |
PDTB123YQA | 50 V, 500 mA PNP resistor-equipped transistors | Production | |
PDTB143EQA | 50 V, 500 mA PNP resistor-equipped transistors | Production | |
PDTB143ET-Q | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTB143XQA | 50 V, 500 mA PNP resistor-equipped transistors | Production | |
PDTB143XT | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTD113ZT-Q | NPN 500 mA, 50 V resistor-equipped transistor; R1?=?1?kΩ,?R2?=?10?kΩ | Production | |
PDTD123ET | NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm | Production | |
PDTD123ET-Q | 50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ | Production | |
PDTD123TT | NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open | Production | |
PDTD123YK | NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm | EndOfLife | |
PDTD123YT-Q | 50 V, 500 mA NPN resistor-equipped transistor; R1?=?2.2?kΩ,?R2?=?10?kΩ | Production | |
PIMC31-Q | 500 mA, 50 V NPN/PNP double resistor-equipped transistor; R1 = 1 k?, R2 = 10 k? | Production | |
PIMC31PAS-Q | 50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor; R1?= 1?kΩ,?R2?=?10 kΩ | Production | |
PIMC32-Q | 50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor (RET); R1?=?2.2?kΩ,?R2?=?10?kΩ | Production | |
PIMC32PAS-Q | 50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor; R1?= 2.2?kΩ,?R2?=?10 kΩ | Production | |
PIMN31 | 500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm | Production | |
PIMN31PAS-Q | 50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor; R1?= 1?kΩ,?R2?=?10 kΩ | Production | |
PIMN32-Q | 50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor (RET); R1?=?2.2?kΩ,?R2?=?10?kΩ | Production | |
PIMN32PAS-Q | 50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor; R1?= 2.2?kΩ,?R2?=?10 kΩ | Production | |
PIMP31-Q | 50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1?=?1?kΩ,?R2?=?10?kΩ | Production | |
PIMP31PAS-Q | 50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor; R1?= 1?kΩ,?R2?=?10 kΩ | Production | |
PIMP32-Q | 50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1?=?2.2?kΩ,?R2?=?10?kΩ | Production | |
PIMP32PAS-Q | 50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor; R1?= 2.2?kΩ,?R2?=?10 kΩ | Production |
Marcom graphics (1) |
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文件名稱 | 標(biāo)題 | 類型 | 日期 |
SOT23_mk.png | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Marcom graphics | 2017-01-28 |
Selection guide (1) |
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文件名稱 | 標(biāo)題 | 類型 | 日期 |
Nexperia_Selection_guide_2023.pdf | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
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