74LVC1G32GM-Q100

Single 2-input OR gate

Automotive qualified

The 74LVC1G32-Q100 is a single 2-input OR gate. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device is fully specified for partial power down applications using I_OFF. The I_OFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

Features and benefits

Automotive product qualification in accordance with AEC-Q100 (Grade 1)
- Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range from 1.65 V to 5.5 V
Overvoltage tolerant inputs to 5.5 V
High noise immunity
CMOS low power dissipation
I_OFF circuitry provides partial Power-down mode operation
±24 mA output drive (V_CC = 3.0 V)
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Complies with JEDEC standard:
- JESD8-7 (1.65 V to 1.95 V)
- JESD8-5 (2.3 V to 2.7 V)
- JESD8-B/JESD36 (2.7 V to 3.6 V)
ESD protection:
- HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
- CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options

參數(shù)類型

型號	V_CC (V)	Logic switching levels	Output drive capability (mA)	t_pd (ns)	f_max (MHz)	Nr of bits	Power dissipation considerations	T_amb (°C)	Package name
74LVC1G32GM-Q100	1.65?-?5.5	CMOS/LVTTL	± 32	2.1	150	1	low	-40~125	XSON6

PCB Symbol, Footprint and 3D Model

Model Name	描述

封裝

型號	可訂購的器件編號，（訂購碼(12NC)）	狀態(tài)	標(biāo)示	封裝	外形圖	回流焊/波峰焊	包裝
74LVC1G32GM-Q100	74LVC1G32GM-Q100H (935299288125)	Active	VG	XSON6 (SOT886)	SOT886	REFLOW_BG-BD-1	SOT886_125

環(huán)境信息

型號	可訂購的器件編號	化學(xué)成分	RoHS	RHF指示符
74LVC1G32GM-Q100	74LVC1G32GM-Q100H	74LVC1G32GM-Q100

品質(zhì)及可靠性免責(zé)聲明

Series

文檔 (13)

文件名稱	標(biāo)題	類型	日期
74LVC1G32_Q100	Single 2-input OR gate	Data sheet	2024-11-15
Nexperia_document_guide_MiniLogic_MicroPak_201808	MicroPak leadless logic portfolio guide	Brochure	2018-09-03
SOT886	3D model for products with SOT886 package	Design support	2019-10-03
lvc1g32	74LVC1G32 IBIS model	IBIS model	2014-10-20
Nexperia_document_leaflet_Logic_Automotive_MicroPak_solutions_201904	Automotive logic in MicroPak leadless packages	Leaflet	2019-04-18
Nexperia_package_poster	Nexperia package poster	Leaflet	2020-05-15
DFN1410-6_SOT886_mk	plastic, extremely thin small outline package; no leads; 6 terminals; 0.6 mm pitch; 1 mm x 1.45 mm x 0.5 mm body	Marcom graphics	2017-01-28
XSON6_SOT886_mk	plastic, extremely thin small outline package; no leads; 6 terminals; 0.6 mm pitch; 1 mm x 1.45 mm x 0.5 mm body	Marcom graphics	2017-01-28
SOT886	plastic, leadless extremely thin small outline package; 6 terminals; 0.5 mm pitch; 1 mm x 1.45 mm x 0.5 mm body	Package information	2022-06-01
SOT886_125	XSON6; Reel pack for SMD, 7''; Q3/T4 product orientation	Packing information	2022-12-21
74LVC1G32GM-Q100_Nexperia_Product_Reliability	74LVC1G32GM-Q100 Nexperia Product Reliability	Quality document	2024-06-16
REFLOW_BG-BD-1	Reflow soldering profile	Reflow soldering	2021-04-06
MAR_SOT886	MAR_SOT886 Topmark	Top marking	2013-06-03

支持

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模型

文件名稱	標(biāo)題	類型	日期
lvc1g32	74LVC1G32 IBIS model	IBIS model	2014-10-20
SOT886	3D model for products with SOT886 package	Design support	2019-10-03

PCB Symbol, Footprint and 3D Model

Model Name	描述

訂購、定價與供貨

型號	Orderable part number	Ordering code (12NC)	狀態(tài)	包裝	Packing Quantity	在線購買
74LVC1G32GM-Q100	74LVC1G32GM-Q100H	935299288125	Active	SOT886_125	5,000	訂單產(chǎn)品

樣品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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