可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
---|---|---|---|---|
GAN190-650FBE | GAN190-650FBEZ | 934665905332 | SOT8075-1 | 訂單產(chǎn)品 |
進一步了解Nexperia的豐富產(chǎn)品組合,比如二極管、雙極性晶體管、ESD保護器件、MOSFET器件、氮化鎵場效應晶體管(GaN FET)、絕緣柵雙極晶體管(IGBT)以及模擬IC和邏輯IC。我們的器件廣泛應用于汽車、工業(yè)、移動和消費等多個領(lǐng)域,幾乎為世界上所有電子設(shè)計提供支持。
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Click here for more information650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5?mm?x?6?mm package
The GAN190-650FBE is a general purpose 650 V, 190 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior performance.
Enhancement mode - normally-off power switch
Ultra high frequency switching capability
No body diode
Low gate charge, low output charge
Qualified for standard applications
ESD protection
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Low package inductance and low package resistance
High power density and high efficiency power conversion
AC-to-DC converters, totem pole PFC
DC-to-DC converters
Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
Datacom and telecom (AC-to-DC and DC-to-DC) converters
Motor drives
Solar (PV) inverters
Class D audio amplifiers, TV PSU and LED drivers
型號 | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GAN190-650FBE | SOT8075-1 | DFN5060-5 | Production | e-mode | N | 1 | 650 | 150 | 11.5 | 1.1 | 125 | 1.7 | N | 96 | 30 | 2023-02-22 |
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
GAN190-650FBE | GAN190-650FBEZ (934665905332) |
Active | 190IFBE |
DFN5060-5 (SOT8075-1) |
SOT8075-1 | SOT8075-1_332 |
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
GAN190-650FBE | 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5?mm?x?6?mm package | Data sheet | 2023-04-19 |
AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
AN90041 | Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs | Application note | 2023-05-09 |
SOT8075-1 | 3D model for products with SOT8075-1 package | Design support | 2023-04-13 |
SOT8075-1 | plastic thermal enhanced small outline package; no leads; 5 terminals; body: 5 × 6 × 0.9 mm | Package information | 2023-03-21 |
SOT8075-1_332 | DFN5060-5; Reel dry pack for SMD, 13"; Q2/T3 product orientation | Packing information | 2023-04-18 |
GAN190-650FBE | GAN190-650FBE SPICE model | SPICE model | 2023-04-12 |
GAN190-650FBE_LTspice | GAN190-650FBE LTspice model | SPICE model | 2024-05-29 |
GAN190-650FBE_SIMetrix | GAN190-650FBE SIMetrix SPICE model | SPICE model | 2024-05-29 |
CauerModel_GAN190-650FBE | Cauer model GAN190-650FBE | Thermal model | 2023-04-12 |
FosterModel_GAN190-650FBE | Foster model GAN190-650FBE | Thermal model | 2023-04-12 |
GAN190-650FBE | GAN190-650FBE RC thermal model | Thermal model | 2023-04-12 |
GAN190-650FBE_Cauer | GAN190-650FBE Cauer model | Thermal model | 2023-04-12 |
GAN190-650FBE_Foster | GAN190-650FBE Foster model | Thermal model | 2023-04-12 |
nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
如果您需要設(shè)計/技術(shù)支持,請告知我們并填寫 應答表 我們會盡快回復您。
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
SOT8075-1 | 3D model for products with SOT8075-1 package | Design support | 2023-04-13 |
GAN190-650FBE | GAN190-650FBE SPICE model | SPICE model | 2023-04-12 |
GAN190-650FBE_LTspice | GAN190-650FBE LTspice model | SPICE model | 2024-05-29 |
GAN190-650FBE_SIMetrix | GAN190-650FBE SIMetrix SPICE model | SPICE model | 2024-05-29 |
CauerModel_GAN190-650FBE | Cauer model GAN190-650FBE | Thermal model | 2023-04-12 |
FosterModel_GAN190-650FBE | Foster model GAN190-650FBE | Thermal model | 2023-04-12 |
GAN190-650FBE | GAN190-650FBE RC thermal model | Thermal model | 2023-04-12 |
GAN190-650FBE_Cauer | GAN190-650FBE Cauer model | Thermal model | 2023-04-12 |
GAN190-650FBE_Foster | GAN190-650FBE Foster model | Thermal model | 2023-04-12 |
型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
---|---|---|---|---|---|---|
GAN190-650FBE | GAN190-650FBEZ | 934665905332 | Active | SOT8075-1_332 | 2,500 | 訂單產(chǎn)品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.