可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| GANE2R7-100CBA | GANE2R7-100CBAZ | 934667634341 | WLCSP22_SOT8089 | 訂單產(chǎn)品 |
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Click here for more informationGANE2R7-100CBA
100 V, 2.7 mOhm Gallium Nitride (GaN) FET in a 4.45 mm x 2.30 mm Wafer Level Chip-Scale Package (WLCSP)
參數(shù)類型
| 型號 | Package version | Package name | Product status | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GANE2R7-100CBA | WLCSP22_SOT8089 | WLCSP22 | Production | 1 | 100 | 2.7 | 150 | 2.5 | 470 | 1.1 | 1400 | 650 | 2024-09-17 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| GANE2R7-100CBA | GANE2R7-100CBAZ (934667634341) |
Active | 2R7DCBA |
WLCSP22 (WLCSP22_SOT8089) |
WLCSP22_SOT8089 | WLCSP22_SOT8089_341 |
文檔 (4)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90041 | Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs | Application note | 2023-05-09 |
| WLCSP22_SOT8089 | WLCSP22: wafer level chip-size package; 22 bumps (2 × 12) | Package information | 2025-01-16 |
| WLCSP22_SOT8089_341 | WLCSP22; Reel dry pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2024-03-28 |
支持
如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。
模型
No documents available
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| GANE2R7-100CBA | GANE2R7-100CBAZ | 934667634341 | Active | WLCSP22_SOT8089_341 | 1,500 | 訂單產(chǎn)品 |
樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GANE2R7-100CBA
100 V, 2.7 mOhm Gallium Nitride (GaN) FET in a 4.45 mm x 2.30 mm Wafer Level Chip-Scale Package (WLCSP)
從安世半導體購買
| SKU | 庫存* | MOQ | 單位價格 | 數(shù)量 |
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