可訂購(gòu)部件
型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
---|---|---|---|---|
PSMN1R2-80CSE | PSMN1R2-80CSEJ | 934666615118 | SOT8005A | 訂單產(chǎn)品 |
進(jìn)一步了解Nexperia的豐富產(chǎn)品組合,比如二極管、雙極性晶體管、ESD保護(hù)器件、MOSFET器件、氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)、絕緣柵雙極晶體管(IGBT)以及模擬IC和邏輯IC。我們的器件廣泛應(yīng)用于汽車、工業(yè)、移動(dòng)和消費(fèi)等多個(gè)領(lǐng)域,幾乎為世界上所有電子設(shè)計(jì)提供支持。
我們的產(chǎn)品在各行各業(yè)均有應(yīng)用,包括汽車、工業(yè)、電力、計(jì)算、消費(fèi)、移動(dòng)和可穿戴設(shè)備等行業(yè)。憑借對(duì)創(chuàng)新和可持續(xù)發(fā)展的不懈承諾,我們的器件成為了行業(yè)效率基準(zhǔn),可幫助全球客戶群體開(kāi)發(fā)高效節(jié)能的前沿解決方案。
試用我們種類齊全的評(píng)估板,體驗(yàn)我們的設(shè)備及其性能。深入了解我們的產(chǎn)品如何助您提高效率、穩(wěn)健性和可靠性,讓您的應(yīng)用大受裨益。您可以在這里找到聚焦在應(yīng)用、封裝和不同的 Nexperia 產(chǎn)品的評(píng)估板。
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationN-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212i package
N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R2-80CSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212).
PSMN1R2-80CSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I2R losses and deliver optimum efficiency when turned fully ON.
Fully optimized Safe Opertating Area (SOA) for superior linear mode operation
Low RDSon for low I2R conduction losses
CCPAK1212i package for applications that demand the highest performance and reliability
Inverted package, suitable for top-side cooling
Hot swap
Load switch
Soft start
E-fuse
Telecommunication systems based on a 48 V backplane/supply rail
型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PSMN1R2-80CSE | SOT8005A | CCPAK1212i | Qualification | N | 1 | 80 | 1.18 | 175 | 375 | 27.3 | 233 | 935 | 76.5 | 2.8 | N | 18705 | 4363 | 2024-05-06 |
型號(hào) | 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
PSMN1R2-80CSE | PSMN1R2-80CSEJ (934666615118) |
Samples available / Development | XP1E2S80C |
CCPAK1212i (SOT8005A) |
SOT8005A | 暫無(wú)信息 |
文件名稱 | 標(biāo)題 | 類型 | 日期 |
---|---|---|---|
PSMN1R2-80CSE | N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | Data sheet | 2024-10-10 |
AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN50005 | Paralleling power MOSFETs in high power applications | Application note | 2021-09-13 |
AN50006 | Power MOSFETs in linear mode | Application note | 2022-04-12 |
AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2024-10-28 |
AN90003 | LFPAK MOSFET thermal design guide | Application note | 2023-08-22 |
AN90016 | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2020-09-03 |
nexperia_document_CCPAK_MOSFETs_2024 | Nexperia CCPAK MOSFETs | Leaflet | 2024-11-19 |
SOT8005A | Plastic, surface mounted copper clip package (CCPAK1212i); 12 terminals;2.0 mm pitch, 12 mm × 12 mm × 2.5 mm body | Package information | 2024-10-23 |
T12_SOT8005A_PSMN1R2-80CSE_Nexperia_Quality_Reliability_document | T12_SOT8005A_PSMN1R2-80CSE_Nexperia_Quality_Reliability_document | Quality document | 2024-11-01 |
PSMN1R2-80CSE | PSMN1R2-80CSE RC thermal model | Thermal model | 2024-09-10 |
PSMN1R2-80CSE_Cauer | PSMN1R2-80CSE Cauer model | Thermal model | 2024-09-10 |
PSMN1R2-80CSE_Foster | PSMN1R2-80CSE Foster model | Thermal model | 2024-09-10 |
如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。
文件名稱 | 標(biāo)題 | 類型 | 日期 |
---|---|---|---|
PSMN1R2-80CSE | PSMN1R2-80CSE RC thermal model | Thermal model | 2024-09-10 |
PSMN1R2-80CSE_Cauer | PSMN1R2-80CSE Cauer model | Thermal model | 2024-09-10 |
PSMN1R2-80CSE_Foster | PSMN1R2-80CSE Foster model | Thermal model | 2024-09-10 |
型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
---|
作為 Nexperia 的客戶,您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.