可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
|---|---|---|---|---|
| PHT6NQ10T | PHT6NQ10T,135 | 934055876135 | SOT223 | 訂單產品 |
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Click here for more informationPHT6NQ10T
N-channel TrenchMOS standard level FET
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
不建議用在新設計中(NRND)。
Features and benefits
Higher operating power due to low thermal resistance
Low conduction losses due to low on-state resistance
Suitable for high frequency applications due to fast switching characteristics
Applications
DC-to-DC convertors
Motor and relay drivers
參數類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PHT6NQ10T
|
SOT223 | SC-73 | Not for design in | N | 1 | 100 | 20 | 90 | 150 | 6.5 | 8.2 | 21 | 1.8 | 135 | 3 | N | 633 | 103 | 2011-01-24 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
|
PHT6NQ10T
|
PHT6NQ10T,135 (934055876135) |
Active | 6NQ10T |
SC-73 (SOT223) |
SOT223 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT223_135 |
文檔 (20)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PHT6NQ10T | N-channel TrenchMOS (tm) transistor | Data sheet | 1999-07-31 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| SOT223 | 3D model for products with SOT223 package | Design support | 2019-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SC-73_SOT223_mk | plastic, surface-mounted package with increased heatsink; 4 leads; 4.6 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body | Marcom graphics | 2017-01-28 |
| SOT223 | plastic, surface-mounted package with increased heatsink; 4 leads; 2.3 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body | Package information | 2022-05-30 |
| SOT223_135 | SC-73; Reel pack for SMD, 13"; Q3/T4 product orientation | Packing information | 2024-02-15 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PHT6NQ10T | PHT6NQ10T SPICE model | SPICE model | 2012-06-08 |
| PHT6NQ10T_16_03_2012 | PHT6NQ10T.16_03_2012 Spice parameter | SPICE model | 2012-04-16 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PHT6NQ10T | PHT6NQ10T SPICE model | SPICE model | 2012-06-08 |
| PHT6NQ10T_16_03_2012 | PHT6NQ10T.16_03_2012 Spice parameter | SPICE model | 2012-04-16 |
| SOT223 | 3D model for products with SOT223 package | Design support | 2019-01-22 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PHT6NQ10T | PHT6NQ10T,135 | 934055876135 | Active | SOT223_135 | 4,000 | 訂單產品 |
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網絡可為您提供 Nexperia 樣品支持。查看官方經銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PHT6NQ10T
N-channel TrenchMOS standard level FET
從安世半導體購買
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