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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

74HCT193DB

Presettable synchronous 4-bit binary up/down counter

The 74HC193; 74HCT193 is a 4-bit synchronous binary up/down counter. Separate up/down clocks, CPU and CPD respectively, simplify operation. The outputs change state synchronously with the LOW-to-HIGH transition of either clock input. If the CPU clock is pulsed while CPD is held HIGH, the device will count up. If the CPD clock is pulsed while CPU is held HIGH, the device will count down. Only one clock input can be held HIGH at any time to guarantee predictable behavior. The device can be cleared at any time by the asynchronous master reset input (MR); it may also be loaded in parallel by activating the asynchronous parallel load input (PL). The terminal count up (TCU) and terminal count down (TCD) outputs are normally HIGH. When the circuit has reached the maximum count state of 15, the next HIGH-to-LOW transition of CPU will cause TCU to go LOW. TCU will stay LOW until CPU goes HIGH again, duplicating the count up clock. Likewise, the TCD output will go LOW when the circuit is in the zero state and the CPD goes LOW. The terminal count outputs can be used as the clock input signals to the next higher order circuit in a multistage counter, since they duplicate the clock waveforms. Multistage counters will not be fully synchronous, since there is a slight delay time difference added for each stage that is added. The counter may be preset by the asynchronous parallel load capability of the circuit. Information present on the parallel data inputs (D0 to D3) is loaded into the counter and appears on the outputs (Q0 to Q3) regardless of the conditions of the clock inputs when the parallel load (PL) input is LOW. A HIGH level on the master reset (MR) input will disable the parallel load gates, override both clock inputs and set all outputs (Q0 to Q3) LOW. If one of the clock inputs is LOW during and after a reset or load operation, the next LOW-to-HIGH transition of that clock will be interpreted as a legitimate signal and will be counted. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 2.0 to 6.0 V

  • CMOS low power dissipation

  • High noise immunity

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Input levels:

    • For 74HC193: CMOS level

    • For 74HCT193: TTL level

  • Synchronous reversible 4-bit binary counting

  • Asynchronous parallel load

  • Asynchronous reset

  • Expandable without external logic

  • Complies with JEDEC standards:

    • JESD8C (2.7 V to 3.6 V)

    • JESD7A (2.0 V to 6.0 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C.

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
74HCT193DB 74HCT193DB,112
(935189730112)
Obsolete no package information
74HCT193DB,118
(935189730118)
Obsolete

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74HCT193DB 74HCT193DB,112 74HCT193DB rohs rhf rhf
74HCT193DB 74HCT193DB,118 74HCT193DB rohs rhf rhf
品質(zhì)及可靠性免責聲明

文檔 (3)

文件名稱 標題 類型 日期
74HC_HCT193 Presettable synchronous 4-bit binary up/down counter Data sheet 2024-03-14
AN11044 Pin FMEA 74HC/74HCT family Application note 2019-01-09
HCT_USER_GUIDE HC/T User Guide User manual 1997-10-31

支持

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模型

No documents available

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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